Description
Fast recovery diodes enable high-speed switching and protect IGBTs and IGCTs from commutation failures. With reverse recovery times as low as 0.3 µs and voltage ratings up to 6 kV, they’re ideal for power electronics, snubber circuits, and high-frequency applications. Available in various configurations and current ratings up to 2.423 kA, they offer low forward voltage drop, minimal leakage, and excellent thermal performance.
| VRRM | IF(AV)@Ths | trr Qrr | I FSM | I2t | I RRM | VFM/IFM 150 °C | VFO | rF | Rth(j-**s) | Tjm | M2 | ||||
| 100 °C | 10 ms KA | 25 °C | V/A | ||||||||||||
| Model | μs μc | mA | Outline | ||||||||||||
| V | A °C | KA2s | V | mΩ | °C/W | °C | KN | ||||||||
| DKFD200A-** | 200-1000 | 200 | 124 | 2 | 50 | 2.7 | 40 | 16 | 2.4/600 | 1.1 | 0.72 | 0.09 | 150 | 3.3-5.5 | C7 |
| DKFD400A-** | 200-1000 | 400 | 116 | 3 | 90 | 5.4 | 145 | 30 | 2.6/1200 | 1.17 | 0.36 | 0.055 | 150 | 5.3-10 | C8 |
| DKFD200A-** | 1100-2000 | 200 | 118 | 2 | 70 | 2.7 | 40 | 16 | 2.4/600 | 1.48 | 0.65 | 0.09 | 150 | 3.3-5.5 | C7 |
| DKFD400A-** | 1100-2000 | 400 | 112 | 3 | 90 | 5.4 | 145 | 30 | 2.6/1200 | 1.3 | 0.42 | 0.055 | 150 | 5.3-10 | C8 |
| DKFD800A-** | 1100-2000 | 800 | 96 | 3 | 130 | 10 | 500 | 40 | 2.8/2400 | 1.31 | 0.37 | 0.033 | 150 | 10月20日 | C17/C18 |
| DKFD300A-** | 1100-2000 | 300 | 117 | 3 | 100 | 4.1 | 90 | 30 | 2.6/900 | 1.3 | 0.55 | 0.065 | 150 | 5.3-12 | C2 |
| DKFD1200A-** | 1100-2000 | 1200 | 92 | 4 | 250 | 15 | 1100 | 80 | 2.8/3000 | 1.42 | 0.26 | 0.022 | 150 | 19-26 | C20 |
| DKFD1600A-** | 200-1000 | 1600 | 82 | 4 | 150 | 20 | 2000 | 80 | 2.8/3000 | 1.15 | 0.2 | 0.022 | 150 | 19-26 | C21 |
| DKFD2500A-** | 1100-2000 | 2500 | 71 | 6 | 700 | 31 | 4800 | 120 | 3.0/5000 | 1.12 | 0.14 | 0.016 | 150 | 27-34 | C24/C25 |
| DKFD3500A-** | 1100-2000 | 3500 | 64 | 6 | 1300 | 44 | 9700 | 200 | 3.0/5000 | 1.19 | 0.12 | 0.011 | 150 | 35-47 | C24/C25 |
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